Germanium (Ge) nanowires were grown via the vapor-liquid-solid growth mechanism and surface-doped with manganese (Mn). The nanowires were annealed at 350˚ C for 30 min to promote the Mn diffusion. Pulsed-laser local electrode atom probe tomography was used to determine the concentration and distribution of Mn in the Ge nanowires. Analysis showed that the amount of Mn in the Ge was ~10-3–10-4, depending on the sample and analysis volume in question. Mn-doped Ge nanowires have potential applications as magnetic semiconductors.

Last modified

• 07/19/2018

Creator

• Lincoln Lauhon
• Jessica Lensch-Falk
• James Riley

DOI

• https://doi.org/10.21985/N2D70N

Keyword

• Volume 5

Date created

• 2008

Resource type

• Article

Rights statement

• In Copyright