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Filtering by: Keyword diffusion length Keyword silicon Subject Materials Science and Engineering

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Description:: In this work, electron beam induced current (EBIC) and scanning photocurrent microscopy (SPCM) were used to quantitatively investigate the electronic properties of silicon nanowire devices. For the first time, it was shown that minority carrier diffusion lengths in phosphorous-doped silicon nanowires are significantly reduced from their bulk values because of...
Keyword:: diode, diffusion length, carrier concentration, nanowire, silicon, and photocurrent
Subject:: Materials Science and Engineering
Creator:: Jonathan Edward Allen
Owner:: Scholarly Digital Publishing
Date Uploaded:: 09/13/2018
Date Modified:: 09/13/2018
Date Created:: 2008-11-25
Resource Type:: Dissertation

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