Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant, limiting factor to the ideal performance of a photodiode, especially at the scale of a focal plane array pixel (< 25 µm), and must be addressed. A reduction of the...
The study of III-Nitride based optoelectronics devices is a maturing field, but there are still many underdeveloped areas in which to make a contribution of new and original research. This work specifically targets the goals of realizing high-efficiency back-illuminated solar-blind photodetectors, solar-blind focal plane arrays, and visible- and solar-blind Avalanche...