Semiconductor nanowires, such as group IV and III-V nanowires, shows distinct electrical, optical and mechanical properties from their bulk counterparts due to their nanoscale size and 1-D morphology. For example, the quantum confinement effect modulates the band gap of a semiconductor nanowire when its diameter approaches or below the exciton...
In this work, electron beam induced current (EBIC) and scanning photocurrent microscopy (SPCM) were used to quantitatively investigate the electronic properties of silicon nanowire devices. For the first time, it was shown that minority carrier diffusion lengths in phosphorous-doped silicon nanowires are significantly reduced from their bulk values because of...